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Electric and magnetic field effects on the magnetostrictive thin film for MEMS

[+] Author Affiliations
Heung-Shik Lee, Chongdu Cho, Dae-Seok Shin

Inha University,Department of Mechanical Engineering, Incheon, South Korea

Sung Pil Chang

Inha University,Department of Electronic Engineering, Incheon, South Korea

J. Micro/Nanolith. MEMS MOEMS. 8(3), 039701 (August 07, 2009). doi:10.1117/1.3196431
History: Received August 15, 2008; Revised June 03, 2009; Accepted June 09, 2009; Published August 07, 2009
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We present the control of magnetostriction and magnetization of the magnetostrictive thin film via additional electric field with original low magnetic field for microelectromechanical systems (MEMS) application. To examine the electric field effect on the magnetostrictive thin film deposited on each substrate, Si and polyimide (Kapton, Dupont Corp.) substrates are used. During the measurement of magnetization and magnetostriction, 0-to50-V electric fields are applied under 0.5-T magnetic fields. As a result, 3% of magnetostriction is enhanced compare with no electric field.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Heung-Shik Lee ; Chongdu Cho ; Dae-Seok Shin and Sung Pil Chang
"Electric and magnetic field effects on the magnetostrictive thin film for MEMS", J. Micro/Nanolith. MEMS MOEMS. 8(3), 039701 (August 07, 2009). ; http://dx.doi.org/10.1117/1.3196431


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