Special Section on Extreme-Ultraviolet Lithography

Flare in extreme ultraviolet lithography: metrology, out-of-band radiation, fractal point-spread function, and flare map calibration

[+] Author Affiliations
Gian F. Lorusso

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Frieda Van Roey

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Eric Hendrickx

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Germain Fenger

Mentor Graphics Corporation, 1001 Ridder Park Drive, San Jose, California 95131

Michael Lam

Mentor Graphics Corporation, 1001 Ridder Park Drive, San Jose, California 95131

Christian Zuniga

Mentor Graphics Corporation, 1001 Ridder Park Drive, San Jose, California 95131

Mohamed Habib

Mentor Graphics Corporation, 1001 Ridder Park Drive, San Jose, California 95131

Hesham Diab

Mentor Graphics Corporation, 1001 Ridder Park Drive, San Jose, California 95131

James Word

Mentor Graphics Corporation, 1001 Ridder Park Drive, San Jose, California 95131

J. Micro/Nanolith. MEMS MOEMS. 8(4), 041505 (October 05, 2009). doi:10.1117/1.3238515
History: Received March 06, 2009; Revised June 10, 2009; Accepted June 18, 2009; Published October 05, 2009
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The critical role of flare in extreme ultraviolet (EUV) lithography is well known. In this work, the implementation of a robust flare metrology is discussed, and the proposed approach is qualified both in terms of precision and accuracy. The flare measurements are compared to full-chip simulations using a simplified single fractal point-spread function (PSF), and the parameters of the analytical PSF are optimized by comparing the simulation output to the experimental results. After flare map calibration, the matching of simulation and experiment in the flare range from 4 to 12% is quite good, clearly indicating an offset of about 3%. The origin of this offset is attributed to the presence of DUV light. An experimental estimate of the DUV component is found in good agreement with the predicted value.

Figures in this Article
© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Gian F. Lorusso ; Frieda Van Roey ; Eric Hendrickx ; Germain Fenger ; Michael Lam, et al.
"Flare in extreme ultraviolet lithography: metrology, out-of-band radiation, fractal point-spread function, and flare map calibration", J. Micro/Nanolith. MEMS MOEMS. 8(4), 041505 (October 05, 2009). ; http://dx.doi.org/10.1117/1.3238515


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