Special Section on Extreme-Ultraviolet Lithography

Recent progress in developing an extreme ultraviolet full-field exposure tool at Selete

[+] Author Affiliations
Kazuo Tawarayama, Hajime Aoyama, Shunko Magoshi, Yuusuke Tanaka, Seiichiro Shirai, Hiroyuki Tanaka

Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

J. Micro/Nanolith. MEMS MOEMS. 8(4), 041510 (December 29, 2009). doi:10.1117/1.3275786
History: Received March 08, 2009; Revised November 06, 2009; Accepted November 18, 2009; Published December 29, 2009; Online December 29, 2009
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The Selete full-field EUV exposure tool, EUV1, manufactured by Nikon, is being set up at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line-and-space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture of 0.25, and conventional illumination (σ=0.8). The results show that 25-nm L&S patterns were resolved. Dynamic exposure experiments demonstrate that the resolution is 45nm across the exposure field. The CD uniformity across a shot is 3nm. Evaluation of the overlay performance of the EUV1 using alignment marks on a processed wafer revealed the repeatability to be better than 1nm. The overlay accuracy obtained with enhanced global alignment was less than 4nm(3σ) after linear correction. These results show that the EUV1 has attained the quality level of a typical alpha-level lithography tool and is suitable for test site verification.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Kazuo Tawarayama ; Hajime Aoyama ; Shunko Magoshi ; Yuusuke Tanaka ; Seiichiro Shirai, et al.
"Recent progress in developing an extreme ultraviolet full-field exposure tool at Selete", J. Micro/Nanolith. MEMS MOEMS. 8(4), 041510 (December 29, 2009). ; http://dx.doi.org/10.1117/1.3275786


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