Articles

Line-edge-roughness transfer during plasma etching: modeling approaches and comparison with experimental results

[+] Author Affiliations
Vassilios Constantoudis

Institute of Microelectronics NCSR Demokritos, Aghia Paraskevi, 15310, Greece

George Kokkoris

Institute of Microelectronics NCSR Demokritos, Aghia Paraskevi, 15310, Greece

Panagiota Xydi

Institute of Microelectronics NCSR Demokritos, Aghia Paraskevi, 15310, Greece

Evangelos Gogolides

Institute of Microelectronics NCSR Demokritos, Aghia Paraskevi, 15310, Greece

Erwine Pargon

LTM-CNRS, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9, France

Mickaël Martin

LTM-CNRS, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9, France

J. Micro/Nanolith. MEMS MOEMS. 8(4), 043004 (December 01, 2009). doi:10.1117/1.3268365
History: Received April 09, 2009; Revised September 23, 2009; Accepted October 09, 2009; Published December 01, 2009; Online December 01, 2009
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Both modeling and experimental results for the effects of plasma etching on photoresist line edge roughness and linewidth roughness (LER/LWR) and their transfer to underlayer films are presented and compared. In particular, we investigate the roughness formation on both photoresist and underlayer sidewalls during (1) isotropic trimming of photoresist, and (2) anisotropic plasma etching and LER transfer to substrate. The trimming process is modeled with an isotropic movement of the resist sidewall. In the anisotropic plasma etching process, the resist sidewall is used as a mask to anisotropically transfer the pattern to the underlying film. Experiments include trimming of a photoresist patterned with 193-nm photolithography in O2 plasma with no bias voltage and anisotropic etching of BARC and Si underlayers in CF4 and HBrCl2O2 with bias. Both model and experimental results show that resist trimming causes reduction of resist LER and increase of the correlation length and roughness exponent with trimming time. This means that surface nano-protrusions versus trimming time become shorter and wider. In the case of anisotropic etching, the model predicts noticeable reduction of LWR, whereas correlation length and roughness exponent remain almost unaffected. The first experimental results seem to confirm these predictions.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Vassilios Constantoudis ; George Kokkoris ; Panagiota Xydi ; Evangelos Gogolides ; Erwine Pargon, et al.
"Line-edge-roughness transfer during plasma etching: modeling approaches and comparison with experimental results", J. Micro/Nanolith. MEMS MOEMS. 8(4), 043004 (December 01, 2009). ; http://dx.doi.org/10.1117/1.3268365


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