Articles

Thick-membrane-operated radio frequency switches with wafer-level package using gold compressive bonding

[+] Author Affiliations
Jongseok Kim

Korea University, College of Engineering, Display and Nanosystem Laboratory, Anam-dong, Seong buk-gu, Seoul, 136-701, Korea and Samsung Electronics, 416 Maetan-3dong, Yeongtong-Gu, Suwon city, Gyeonggi-Do, 443-742, Korea

Sangwook Kwon, Youngtack Hong, Insang Song, Heemoon Jeong, Hyung Choi

Samsung Electronics, 416 Maetan-3dong, Yeongtong-Gu, Suwon city, Gyeonggi-Do, 443-742 Korea

Byeongkwon Ju

Korea University, College of Engineering, Display and Nanosystem Laboratory, Anam-dong, Seong buk-gu, Seoul, 136-701, Korea

J. Micro/Nanolith. MEMS MOEMS. 8(4), 043020 (October 02, 2009). doi:10.1117/1.3238545
History: Received January 14, 2009; Revised August 07, 2009; Accepted August 14, 2009; Published October 02, 2009
Text Size: A A A

An electrostatically actuated radio frequency (rf) switch is fabricated using a thick silicon membrane, and the device is packaged using a high resistivity silicon cap wafer with a gold (Au) thermocompressive bonding method. To achieve an rf switch that can operate at low voltage, a thick membrane with a pivot under the membrane is used. This design makes it possible to maintain the very small gap between the electrodes and the membrane without bending. A cavity with a pivot-patterned silicon wafer and a coplanar waveguide (CPW) signal-line-formed glass wafer is bonded using an anodic bonding method. After a mechanical polishing process, a deep reactive ion etcher is used to fabricate the membrane structure with a spring and a spring bar. To package the fabricated rf switch, an Au thermocompressive bonding process is used. A 1-μm-thick sputtered Au layer is used as intermediate bonding material. The bonding temperature and pressure are 350 °C and 63 MPa, respectively, and the time duration of the bonding is set to 30 min. The electrodes of the switch and the electrical contact pads on the cap wafers are interconnected via a hole and a sputtered Au metal layer. The total size of the complete packaged rf switch is 2.2 × 1.85 mm, and its rf characteristics have been measured using a Hewlett−Packard (HP) 8510C network analyzer. The measured driving voltage is approximately 16 V, the isolation is approximately −38.4 dB, and the insertion loss is approximately −0.43 dB at 2 GHz.

Figures in this Article
© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Jongseok Kim ; Sangwook Kwon ; Youngtack Hong ; Insang Song ; Heemoon Jeong, et al.
"Thick-membrane-operated radio frequency switches with wafer-level package using gold compressive bonding", J. Micro/Nanolith. MEMS MOEMS. 8(4), 043020 (October 02, 2009). ; http://dx.doi.org/10.1117/1.3238545


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

PubMed Articles
Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.