Articles

Formation of uniform nanoscale oxide layers assembled by overlapping oxide lines using atomic force microscopy

[+] Author Affiliations
Ampere A. Tseng

Arizona State University, Department of Mechanical and Aerospace Engineering, Tempe, Arizona 85287-6106

Taewoo Lee

Arizona State University, Department of Mechanical and Aerospace Engineering, Tempe, Arizona 85287-6106

Andrea Notargiacomo

Roma Tre University, Department of Physics and Institute of Photonic and Nanotechnology—CNR, Rome 00146, Italy

T. P. Chen

Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore 639798

J. Micro/Nanolith. MEMS MOEMS. 8(4), 043050 (December 11, 2009). doi:10.1117/1.3268427
History: Received February 27, 2009; Revised October 01, 2009; Accepted October 13, 2009; Published December 11, 2009; Online December 11, 2009
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Atomic force microscopy (AFM) has been widely used for creating nanoscale oxide lines on various material surfaces. The assembling technique used for overlapping an array of these oxide lines into a uniform oxide layer is analytically investigated and experimentally verified. The experimental data of the oxide lines induced at different scanning speeds are analytically correlated to provide the basic formula for the assembling technique. The superposition principle is then applied for simulating the assembling process to extract the criteria for assembling a uniform layer. Experiments have been conducted to verify the reliability of the uniformity criteria analytically obtained and the feasibility of the assembling technique developed. Indeed, a uniform oxide layer can be precisely assembled by following the uniformity criteria developed.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Topics

Oxides

Citation

Ampere A. Tseng ; Taewoo Lee ; Andrea Notargiacomo and T. P. Chen
"Formation of uniform nanoscale oxide layers assembled by overlapping oxide lines using atomic force microscopy", J. Micro/Nanolith. MEMS MOEMS. 8(4), 043050 (December 11, 2009). ; http://dx.doi.org/10.1117/1.3268427


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