22-nm-node technology active-layer patterning for planar transistor devices

Ryoung-Han Kim; Steven J. Holmes; Scott D. Halle; Vito Dai; Jason E. Meiring; Aasutosh D. Dave; Matthew E. Colburn; Harry J. Levinson

doi:10.1117/1.3302125

1 January 2010 22-nm-node technology active-layer patterning for planar transistor devices

Ryoung-Han Kim, Steven J. Holmes, Scott D. Halle, Vito Dai, Jason E. Meiring, Aasutosh D. Dave, Matthew E. Colburn, Harry J. Levinson

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 9, Issue 1, 013001 (January 2010). https://doi.org/10.1117/1.3302125

Abstract

As the semiconductor device size shrinks without a concomitant increase of numerical aperture (NA) and refractive index of the immersion fluid, printing 22-nm-technology devices presents challenges in resolution. Therefore, aggressive integration of a resolution enhancement technique (RET), design for manufacturability (DFM), and layer-specific lithographic process development are strongly required in 22-nm-technology lithography. We show patterning of an active layer of a 22-nm-node planar logic transistor device, and discuss achievements and challenges. Key issues identified include printing tight pitches, isolated trench, and 2-D features while maintaining a large lithographic process window across the chip while scaling down the cell size. Utilizing NA=1.2, printing of the static random access memory (SRAM) of a cell size of 0.1 µm2 and other critical features across the chip with a process window are demonstrated.

©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Ryoung-Han Kim, Steven J. Holmes, Scott D. Halle, Vito Dai, Jason E. Meiring, Aasutosh D. Dave, Matthew E. Colburn, and Harry J. Levinson "22-nm-node technology active-layer patterning for planar transistor devices," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(1), 013001 (1 January 2010). https://doi.org/10.1117/1.3302125

Published: 1 January 2010

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