Articles

Lithographic qualification of new opaque MoSi binary mask blank for the 32-nm node and beyond

[+] Author Affiliations
Greg McIntyre

IBM Advanced Lithography Research, Albany Nanotech, Albany, New York 12203

Michael Hibbs

IBM Photomask Development, Essex Junction, Vermont 05452

Jaione Tirapu-Azpiroz

IBM Semiconductor Research and Development, Fishkill, New York 12533

Geng Han

IBM Semiconductor Research and Development, Fishkill, New York 12533

Scott Halle

BM Advanced Lithography Research, Albany Nanotech, Albany, New York 12203

Tom Faure

IBM Photomask Development, Essex Junction, Vermont 05452

Ryan Deschner

IBM Semiconductor Research and Development, Fishkill, New York 12533

Brad Morgenfeld

IBM Semiconductor Research and Development, Fishkill, New York 12533

Sridhar Ramaswamy

IBM Semiconductor Research and Development, Fishkill, New York 12533

Alfred Wagner

IBM Semiconductor Research and Development, Fishkill, New York 12533

Tim Brunner

IBM Semiconductor Research and Development, Fishkill, New York 12533

Yasutaka Kikuchi

Toppan Photomasks, Inc., 1000 River Street, Essex Junction, Vermont 05452

J. Micro/Nanolith. MEMS MOEMS. 9(1), 013010 (February 08, 2010). doi:10.1117/1.3295712
History: Received November 04, 2008; Revised November 24, 2009; Accepted December 04, 2009; Published February 08, 2010; Online February 08, 2010
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We discuss the lithographic qualification of a new type of binary mask blank consisting of an opaque layer of MoSi on a glass substrate, referred to simply as OMOG. First, OMOG lithographic performance will be compared to a previous chrome/MoSi/glass binary intensity mask (BIM) blank. Standard 70-nm chrome on class (COG) was not considered, as it failed to meet mask-making requirements. Theory and a series of simulation and experimental studies show OMOG to outperform BIM, particularly due to electromagnetic effects and optical proximity correction (OPC) predictability concerns, as OMOG behaves very similarly to the ideal thin mask approximation (TMA). A new TMA-predictability metric is defined as a means to compare mask blanks. We weigh the relative advantages and disadvantages of OMOG compared to 6% attenuated phase shifting. Although both mask blanks are likely sufficient for the 32-nm and 22-nm nodes, some differences exist and are described. Overall, however, of the blanks considered, it is concluded that OMOG provides the most robust and extendable imaging solution available for 32-nm and beyond.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Greg McIntyre ; Michael Hibbs ; Jaione Tirapu-Azpiroz ; Geng Han ; Scott Halle, et al.
"Lithographic qualification of new opaque MoSi binary mask blank for the 32-nm node and beyond", J. Micro/Nanolith. MEMS MOEMS. 9(1), 013010 (February 08, 2010). ; http://dx.doi.org/10.1117/1.3295712


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