Errata

Errata: Design-specific variation in pattern transver by via/contact etch process: full-chip analysis

[+] Author Affiliations
Valeriy Sukharev, Ara Markosian

Mentor Graphics Corporation,1001 Ridder Park Drive, San Jose, California 95131

Armen Kteyan, Levon Manukyan, Nikolay Khachatryan

Mentor Graphics Corporation,13A Vagharshyan Street, Yerevan 0012, Armenia

Jun-Ho Choy

Mentor Graphics Corporation,1001 Ridder Park Drive, San Jose, California 95131

Hasmik Lazaryan, Henrik Hovsepyan

Mentor Graphics Corporation,13A Vagharshyan Street, Yerevan 0012, Armenia

Seiji Onoue, Takuo Kikuchi

Toshiba Corporation,Corporate Manufacturing Engineering Center, 33 Shinisogocho, Isogo-ku, Yokohama-shi, Kanagawa 235-0017, Japan

Tetsuya Kamigaki

Toshiba Corporation Semiconductor Company,Advanced Memory Development Center, Kawasaki, Japan

J. Micro/Nanolith. MEMS MOEMS. 9(1), 019801 (February 09, 2010). doi:10.1117/1.3314279
History: Published February 09, 2010; Online February 09, 2010
Text Size: A A A

Open Access Open Access

This article [J. Micro/Nanolith. MEMS MOEMS, 8, 043007 (2009)] was originally published online on 4 December 2009 with an error on page 4, Fig. 2. The correct figure is printed below.

Graphic Jump LocationF2 :

Schematic of SiO2 etch mechanism.

All online versions of the article were corrected on 20 January 2010.

© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Valeriy Sukharev ; Ara Markosian ; Armen Kteyan ; Levon Manukyan ; Nikolay Khachatryan, et al.
"Errata: Design-specific variation in pattern transver by via/contact etch process: full-chip analysis", J. Micro/Nanolith. MEMS MOEMS. 9(1), 019801 (February 09, 2010). ; http://dx.doi.org/10.1117/1.3314279


Figures

Graphic Jump LocationF2 :

Schematic of SiO2 etch mechanism.

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