Articles

Monte Carlo modeling in the low-energy domain of the secondary electron emission of polymethylmethacrylate for critical-dimension scanning electron microscopy

[+] Author Affiliations
Maurizio Dapor

Centro Materiali e Microsistemi, FBK-IRST, I-38123, Povo, Trento, Italy and Università di Trento, Dipartimento di Ingegneria dei Materiali e Tecnologie Industriali, Italy

Mauro Ciappa

ETH-Zurich, Integrated Systems Laboratory, Switzerland

Wolfgang Fichtner

ETH-Zurich, Integrated Systems Laboratory, Switzerland

J. Micro/Nanolith. MEMS MOEMS. 9(2), 023001 (April 02, 2010). doi:10.1117/1.3373517
History: Received March 23, 2009; Revised February 03, 2010; Accepted February 12, 2010; Published April 02, 2010; Online April 02, 2010
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The main scattering mechanisms governing the transport of electrons in PMMA in an energy domain ranging from the energy of the primary electron beam down to few hundreds of meV are identified. A quantitative Monte Carlo model for the emission of secondary electrons is developed to be applied for critical dimensions extraction from high-resolution scanning electron microscopy (SEM) images. Selected results are presented, which demonstrate the accuracy of the proposed approach.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Topics

Electrons

Citation

Maurizio Dapor ; Mauro Ciappa and Wolfgang Fichtner
"Monte Carlo modeling in the low-energy domain of the secondary electron emission of polymethylmethacrylate for critical-dimension scanning electron microscopy", J. Micro/Nanolith. MEMS MOEMS. 9(2), 023001 (April 02, 2010). ; http://dx.doi.org/10.1117/1.3373517


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