Articles

Thin-absorber extreme-ultraviolet lithography mask with light-shield border for full-field scanner: flatness and image placement change through mask process

[+] Author Affiliations
Takashi Kamo

MIRAI-Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki 305-8569, Japan

Yuusuke Tanaka, Toshihiko Tanaka, Iwao Nishiyama, Osamu Suga

MIRAI-Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki 305-8569, Japan

Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri

Dai Nippon Printing Co., Ltd., Electronic Device Operations, 2-2-1 Fukuoka, Fujimino-shi, Saitama 356-8507, Japan

Tsutomu Shoki

Hoya Corporation, Blanks Division, 3280 Nakamaru, Nagasaka-cho, Hokuto-shi, Yamanashi 408-8550, Japan

Youichi Usui

Hoya Corporation, Research and Development Center, 3-3-1 Musashino, Akishima-shi, Tokyo 196-8510, Japan

J. Micro/Nanolith. MEMS MOEMS. 9(2), 023005 (April 09, 2010). doi:10.1117/1.3378154
History: Received October 21, 2009; Revised February 09, 2010; Accepted February 22, 2010; Published April 09, 2010; Online April 09, 2010
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When a thinner absorber mask is practically applied to the extreme ultraviolet lithography for ultra large scale integration chip production, it is inevitable to introduce an extreme ultraviolet (EUV) light shield area to suppress leakage of the EUV light from adjacent exposure shots. We believe that a light-shield border of the multilayer etching type is a promising structure in terms of mask process flexibility for higher mask critical dimension accuracy. We evaluate the etching impact of the absorber and multilayer on the mask flatness and image placement change through the mask process of a thin absorber mask with a light-shield border of the multilayer etching type structure. We clarify the relation between mask flatness and mask image placement shift.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Takashi Kamo ; Yuusuke Tanaka ; Toshihiko Tanaka ; Iwao Nishiyama ; Osamu Suga, et al.
"Thin-absorber extreme-ultraviolet lithography mask with light-shield border for full-field scanner: flatness and image placement change through mask process", J. Micro/Nanolith. MEMS MOEMS. 9(2), 023005 (April 09, 2010). ; http://dx.doi.org/10.1117/1.3378154


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