The actual extreme ultraviolet lithography tools will have aberrations around seven times larger than those of the latest ArF lithography tools in wavelength normalized rms. We calculated the influence of aberrations on the size error and pattern shift error using Zernike sensitivity analysis. Mask-induced aberration restricts the specification of aberration. Without periodic additional pattern, the aberration level that can be accepted to form dual-gate patterns was rms. Arranging the periodic additional pattern relaxed the aberration tolerance. With periodic additional pattern, the acceptable aberration level to form patterns was below rms. It is important to make pattern periodicity for the relaxation of the aberration specification.