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Design for manufacture to deal with mask-induced critical dimension errors in the extreme ultraviolet

[+] Author Affiliations
Yumi Nakajima

Toshiba Corporation, Corporate Research and Development Center, Device Process Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

Takashi Sato

Toshiba Corporation, Corporate Research and Development Center, Device Process Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

Ryoichi Inanami

Toshiba Corporation, Corporate Research and Development Center, Device Process Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

Tetsuro Nakasugi

Toshiba Corporation, Corporate Research and Development Center, Device Process Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

Tatsuhiko Higashiki

Toshiba Corporation, Corporate Research and Development Center, Device Process Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

J. Micro/Nanolith. MEMS MOEMS. 9(2), 023009 (May 27, 2010). doi:10.1117/1.3421948
History: Received April 25, 2009; Revised February 26, 2010; Accepted March 22, 2010; Published May 27, 2010; Online May 27, 2010
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The actual extreme ultraviolet lithography tools will have aberrations around seven times larger than those of the latest ArF lithography tools in wavelength normalized rms. We calculated the influence of aberrations on the size error and pattern shift error using Zernike sensitivity analysis. Mask-induced aberration restricts the specification of aberration. Without periodic additional pattern, the aberration level that can be accepted to form 22nm dual-gate patterns was <8mλ rms. Arranging the periodic additional pattern relaxed the aberration tolerance. With periodic additional pattern, the acceptable aberration level to form 22nm patterns was below <37mλ rms. It is important to make pattern periodicity for the relaxation of the aberration specification.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Yumi Nakajima ; Takashi Sato ; Ryoichi Inanami ; Tetsuro Nakasugi and Tatsuhiko Higashiki
"Design for manufacture to deal with mask-induced critical dimension errors in the extreme ultraviolet", J. Micro/Nanolith. MEMS MOEMS. 9(2), 023009 (May 27, 2010). ; http://dx.doi.org/10.1117/1.3421948


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