Articles

Impact of total measurement uncertainty on overlay error correction

[+] Author Affiliations
Jangho Shin

Samsung Electronics Company, Semiconductor R&D, Hwasung City, Gyeonggi-Do, Korea 445-701

Jeongho Yeo

Samsung Electronics Company, Semiconductor R&D, Hwasung City, Gyeonggi-Do, Korea 445-701

Young-Seog Kang

Samsung Electronics Company, Semiconductor R&D, Hwasung City, Gyeonggi-Do, Korea 445-701

Woosung Han

Samsung Electronics Company, Semiconductor R&D, Hwasung City, Gyeonggi-Do, Korea 445-701

J. Micro/Nanolith. MEMS MOEMS. 9(3), 033001 (July 29, 2010). doi:10.1117/1.3459941
History: Received January 22, 2010; Revised May 21, 2010; Accepted May 17, 2010; Published July 29, 2010; Online July 29, 2010
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The objective of this work is to determine a guideline for defining practical overlay metrology requirements for a given design rule. Total measurement uncertainty (TMU) of overlay metrology is defined as the square root of square sum of the following items: the mean of the tool-induced shift (TIS), TIS 3-sigma, dynamic precision, and tool-to-tool matching. The TMU is dependent upon process conditions, so TMU is different by process layer. In this study, the impact of TMU on overlay error correction, which includes process and measurement noise, is investigated in terms of the stability of high-order overlay correction parameters. By evaluating the variation range of correctable parameters as a figure of merit, the corresponding TMU is determined for a given design rule. Utilizing this methodology, we determined that 2nm of TMU value is the allowable limit for 45nm of dynamic random access memory (DRAM) half pitch based upon simulation results. Similarly, we recommend 1nm of TMU for 36nm of DRAM half pitch. Our methodology is described and our simulation results are discussed.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Topics

Simulations

Citation

Jangho Shin ; Jeongho Yeo ; Young-Seog Kang and Woosung Han
"Impact of total measurement uncertainty on overlay error correction", J. Micro/Nanolith. MEMS MOEMS. 9(3), 033001 (July 29, 2010). ; http://dx.doi.org/10.1117/1.3459941


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