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Cleaning of step-and-flash imprint masks with damage-free nonacid technology

[+] Author Affiliations
Sherjang Singh, Ssuwei Chen

HamaTech APE Inc., 1826 Kramer Lane, Suite B, Austin, Texas 78758

Kosta Selinidis, Brian Fletcher, Ian McMackin, Ecron Thompson, Douglas J. Resnick

Molecular Imprints Inc., 1807 Braker Lane Building C100, Austin, Texas 78758

Peter Dress

HamaTech APE GmbH & Ko. KG, Ferdinand-von-Steinbeis Ring 10, 75447 Sternenfels, Germany

Uwe Dietze

HamaTech APE Inc., 1826 Kramer Lane, Suite B, Austin, Texas 78758

J. Micro/Nanolith. MEMS MOEMS. 9(3), 033003 (July 16, 2010). doi:10.1117/1.3462815
History: Received October 14, 2009; Accepted May 21, 2010; Published July 16, 2010; Online July 16, 2010
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Step-and-flash imprint lithography (S-FIL®) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low-viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub-40-nm critical dimension (CD) lithography methods, the resulting high resolution, high throughput through clustering, 3-D patterning capability, low process complexity, and low cost of ownership of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid the risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high-volume manufacturing requirements. We present various methods of residual (cross-linked) resist removal and final imprint mask cleaning. Conventional and nonconventional (acid-free) methods of particle removal are compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Sherjang Singh ; Ssuwei Chen ; Kosta Selinidis ; Brian Fletcher ; Ian McMackin, et al.
"Cleaning of step-and-flash imprint masks with damage-free nonacid technology", J. Micro/Nanolith. MEMS MOEMS. 9(3), 033003 (July 16, 2010). ; http://dx.doi.org/10.1117/1.3462815


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