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Multiactuation complementary metal-oxide semiconductor radio frequency MEMS switch

[+] Author Affiliations
Chiung-I Lee

Industrial Technology Research Institute, Microsystems Technology Center, No. 31 Gongye 2nd Road, 70955 Tainan, Taiwan

Chih-Hsiang Ko

Industrial Technology Research Institute, Microsystems Technology Center, No. 31 Gongye 2nd Road, 70955 Tainan, Taiwan

Tsun-Che Huang

Industrial Technology Research Institute, Microsystems Technology Center, No. 31 Gongye 2nd Road, 70955 Tainan, Taiwan

Feng-Chia Hsu

Industrial Technology Research Institute, Microsystems Technology Center, No. 31 Gongye 2nd Road, 70955 Tainan, Taiwan

J. Micro/Nanolith. MEMS MOEMS. 9(3), 033008 (August 26, 2010). doi:10.1117/1.3478225
History: Received January 10, 2010; Revised May 25, 2010; Accepted July 06, 2010; Published August 26, 2010; Online August 26, 2010
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A complementary metal-oxide semiconductor (CMOS)-compatible, capacitive, shunt-type radio frequency MEMS switch design is demonstrated. The switch is actuated by an electrothermal actuator and an electrostatic actuator at the same time, and the switching status is latched by electrostatic force only. Since thermal actuators require a lower voltage than electrostatic actuators, and since an electrostatic force can maintain switching status with virtually no power, the benefits of the mechanism are a very low actuation voltage and low power consumption. The switch is fabricated by a standard 0.35-μm 2P4M CMOS process. The movable membrane can be released by either wet or dry postprocessing etching technologies. The design’s CMOS-process compatibility is important because radio frequency (RF) characteristics are determined not just by the device itself. The design can minimize parasitic capacitance when a packaged RF switch and a packaged IC are wired together. The switch contains a set of coplanar waveguide transmission lines and a suspended membrane. The CPW lines and the membrane are contained in the metal layers of the CMOS process. The electrothermal actuators are contained in the polysilicon layer. Only standard CMOS process layers are needed for both the electrothermal and electrostatic actuations in the RF switch. The measurement results show that the electrothermal or electrostatic actuation requires less than 7V.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Chiung-I Lee ; Chih-Hsiang Ko ; Tsun-Che Huang and Feng-Chia Hsu
"Multiactuation complementary metal-oxide semiconductor radio frequency MEMS switch", J. Micro/Nanolith. MEMS MOEMS. 9(3), 033008 (August 26, 2010). ; http://dx.doi.org/10.1117/1.3478225


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