Special Section on Line-Edge Roughness

Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes

[+] Author Affiliations
Alessandro Vaglio Pret

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Roel Gronheid

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Philippe Foubert

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

J. Micro/Nanolith. MEMS MOEMS. 9(4), 041203 (December 13, 2010). doi:10.1117/1.3494614
History: Received March 31, 2010; Revised July 13, 2010; Accepted July 21, 2010; Published December 13, 2010; Online December 13, 2010
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A previously developed linewidth roughness analysis technique is used to characterize post-lithography process roughness reduction in the frequency domain. Post-lithography processes are likely to be required to reach the International Technology Roadmap for Semiconductors roughness specifications for the 32-nm and 22-nm technological nodes. The aim of these processes is to reduce 3σ linewidth roughness after etch without dramatic changes in critical dimensions. Various techniques are discussed: in-track chemical processes, ion-beam sputtering, and thermal and plasma treatments—each technique manifests a characteristic smoothing, reducing roughness up to 34%. Exploiting roughness mitigation at different frequencies, our target is to determine whether 50% 3σ linewidth roughness reduction after etch is feasible.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Alessandro Vaglio Pret ; Roel Gronheid and Philippe Foubert
"Roughness characterization in the frequency domain and linewidth roughness mitigation with post-lithography processes", J. Micro/Nanolith. MEMS MOEMS. 9(4), 041203 (December 13, 2010). ; http://dx.doi.org/10.1117/1.3494614


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