Special Section on Line-Edge Roughness

Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images

[+] Author Affiliations
Takashi Kamo

MIRAI-Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki 305-8569, Japan

Hajime Aoyama, Yukiyasu Arisawa, Mihoko Kijima, Toshihiko Tanaka, Osamu Suga

MIRAI-Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki 305-8569, Japan

J. Micro/Nanolith. MEMS MOEMS. 9(4), 041204 (December 01, 2010). doi:10.1117/1.3494618
History: Received March 01, 2010; Revised July 16, 2010; Accepted July 26, 2010; Published December 01, 2010; Online December 01, 2010
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The impact of an EUV mask absorber defect with pattern roughness on lithographic images was studied. In order to reduce systematic line width roughness (LWR) of wafer printed patterns, the mask making process was improved; and in order to reduce random LWR, low line-edge roughness resist material and a critical dimension averaging method of multiple-exposure shots were introduced. Then, by using a small field exposure tool, a mask-induced systematic printed LWR was quantified and estimated at 32-nm half-pitch and 28-nm half-pitch. The measurement results of the critical mask absorber defect size were compared with the simulation, and the results were then discussed.

Figures in this Article
© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Takashi Kamo ; Hajime Aoyama ; Yukiyasu Arisawa ; Mihoko Kijima ; Toshihiko Tanaka, et al.
"Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images", J. Micro/Nanolith. MEMS MOEMS. 9(4), 041204 (December 01, 2010). ; http://dx.doi.org/10.1117/1.3494618


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