Electrical impact of line-edge roughness on sub-45-nm node standard cells

Yongchan Ban; Savithri Sundareswaran; David Z. Pan

doi:10.1117/1.3500746

1 October 2010 Electrical impact of line-edge roughness on sub-45-nm node standard cells

Yongchan Ban, Savithri Sundareswaran, David Z. Pan

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 9, Issue 4, 041206 (October 2010). https://doi.org/10.1117/1.3500746

Abstract

Since line-end roughness (LER) has been reported to be of the order of several nanometers and to not decrease as the device shrinks, it has evolved as a critical problem in sub-45-nm devices and may lead to serious device parameter fluctuations and performance limitations for future very large scale integration (VLSI) circuit applications. We present a new cell characterization methodology that uses the nonrectangular gate print images generated by lithography and etch simulations with the random LER variation. We systematically analyze the random LER by taking the impact on circuit performance due to LER variation into consideration. We observed that the saturation current, delay, and leakage current are highly affected by LER as the gate length becomes thinner. Results show that when the root mean square value of LER is 6 nm from its nominal line edge, the worst case saturation current, delay, and leakage current degradation are as much as 10.3% decrease, 12.4% increase, and 7× increase at a 45-nm-node standard cell. Meanwhile the current, delay, and leakage current degradation at a 32-nm-node cell are up to 19.0% decrease, 21.8% increase, and 4600× increase, respectively.

©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Yongchan Ban, Savithri Sundareswaran, and David Z. Pan "Electrical impact of line-edge roughness on sub-45-nm node standard cells," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(4), 041206 (1 October 2010). https://doi.org/10.1117/1.3500746

Published: 1 October 2010

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