Special Section on Line-Edge Roughness

Electrical impact of line-edge roughness on sub-45-nm node standard cells

[+] Author Affiliations
Yongchan Ban

The University of Texas at Austin, Department of Electrical and Computer Engineering, 2400 Speedway, Austin, Texas 78712, E-mail: ycban@cerc.utexas.edu

Savithri Sundareswaran

Freescale Semiconductor, 7700 West Parmer Lane, Austin, Texas 78729

David Z. Pan

The University of Texas at Austin, Department of Electrical and Computer Engineering, 2400 Speedway, Austin, Texas 78712

J. Micro/Nanolith. MEMS MOEMS. 9(4), 041206 (December 06, 2010). doi:10.1117/1.3500746
History: Received April 01, 2010; Revised August 12, 2010; Accepted August 23, 2010; Published December 06, 2010; Online December 06, 2010
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Since line-end roughness (LER) has been reported to be of the order of several nanometers and to not decrease as the device shrinks, it has evolved as a critical problem in sub-45-nm devices and may lead to serious device parameter fluctuations and performance limitations for future very large scale integration (VLSI) circuit applications. We present a new cell characterization methodology that uses the nonrectangular gate print images generated by lithography and etch simulations with the random LER variation. We systematically analyze the random LER by taking the impact on circuit performance due to LER variation into consideration. We observed that the saturation current, delay, and leakage current are highly affected by LER as the gate length becomes thinner. Results show that when the root mean square value of LER is 6 nm from its nominal line edge, the worst case saturation current, delay, and leakage current degradation are as much as 10.3% decrease, 12.4% increase, and 7× increase at a 45-nm-node standard cell. Meanwhile the current, delay, and leakage current degradation at a 32-nm-node cell are up to 19.0% decrease, 21.8% increase, and 4600× increase, respectively.

Figures in this Article
© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Yongchan Ban ; Savithri Sundareswaran and David Z. Pan
"Electrical impact of line-edge roughness on sub-45-nm node standard cells", J. Micro/Nanolith. MEMS MOEMS. 9(4), 041206 (December 06, 2010). ; http://dx.doi.org/10.1117/1.3500746


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