Special Section on Line-Edge Roughness

Effects of resist sidewall morphology on line-edge roughness reduction and transfer during etching: is the resist sidewall after development isotropic or anisotropic?

[+] Author Affiliations
Vassilios Constantoudis

National Centre of Scientific Research, Demokritos, Institute of Microelectronics, Aghia Paraskevi, 15310 Greece

George Kokkoris

National Centre of Scientific Research, Demokritos, Institute of Microelectronics, Aghia Paraskevi, 15310 Greece

Evangelos Gogolides

National Centre of Scientific Research, Demokritos, Institute of Microelectronics, Aghia Paraskevi, 15310 Greece

Erwine Pargon

Centre National de la Recherche Scientifique, Laboratorie des Technologies de la Micro-électronique, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9, France

Mickaël Martin

Centre National de la Recherche Scientifique, Laboratorie des Technologies de la Micro-électronique, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9, France

J. Micro/Nanolith. MEMS MOEMS. 9(4), 041209 (December 09, 2010). doi:10.1117/1.3497601
History: Received April 01, 2010; Revised August 17, 2010; Accepted August 26, 2010; Published December 09, 2010; Online December 09, 2010
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Measurements of the sidewall morphology of commercial resist lines (3-D line-edge roughness) after lithography and before etching by critical dimension atomic force microscopy (CD-AFM) and scanning electron microscopy show that they exhibit anisotropy in the form of striations perpendicular to line direction. When this anisotropy of postlithography resist sidewalls is included in the models for trimming and pattern transfer proposed in an earlier paper [Constantoudis et al. , J. Micro/Nanolith. MEMS MOEMS8(4), 043004 (2009)], the models predict the beneficial role of trimming process in line-edge roughness reduction during pattern transfer, in agreement with experimental results. Furthermore, experimental and simulation studies show that the CD-AFM measurements of the 3-D line width roughness may overestimate the correlation length. Taking into account this finding in the model for trimming, we find that model predictions further approach the experimental results.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Vassilios Constantoudis ; George Kokkoris ; Evangelos Gogolides ; Erwine Pargon and Mickaël Martin
"Effects of resist sidewall morphology on line-edge roughness reduction and transfer during etching: is the resist sidewall after development isotropic or anisotropic?", J. Micro/Nanolith. MEMS MOEMS. 9(4), 041209 (December 09, 2010). ; http://dx.doi.org/10.1117/1.3497601


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