Special Section on Line-Edge Roughness

Stochastic simulation of resist linewidth roughness and critical dimension uniformity for optical lithography

[+] Author Affiliations
Stewart A. Robertson, John J. Biafore, Mark D. Smith

KLA-Tencor Corporation, PCID Division, 8834 North Capital of Texas Highway, Austin, Texas 78759

Michael T. Reilly, Jerome Wandell

Dow Electronic Materials, 455 Forest Street, Marlborough, Massachusetts 01752

J. Micro/Nanolith. MEMS MOEMS. 9(4), 041212 (December 01, 2010). doi:10.1117/1.3517090
History: Received April 14, 2010; Revised September 22, 2010; Accepted October 04, 2010; Published December 01, 2010; Online December 01, 2010
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The physical processes that underpin a recently developed commercial stochastic resist model are introduced and the model details discussed. The model is calibrated to experimental data for a commercially available immersion chemically amplified photoresist using basic physical information about the resist and an iterative fitting procedure. This data comprises CD (critical dimension) and LWR (linewidth roughness) measurements through focus and exposure for three separate line-type features on varying pitches: dense, semidense, and isolated. A root mean square error (RMSE) of 2.0 nm is observed between the calibrated model and the experimental CD data. The ability of the calibrated model to predict experimentally observed CD uniformity distributions is tested for a variety of 1-D and 2-D patterns under fixed focus and exposure conditions. The subnanometer RMSE obtained between experiment and simulation suggests that the calibrated stochastic model has excellent predictive power for a variety of applications.

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© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Stewart A. Robertson ; John J. Biafore ; Mark D. Smith ; Michael T. Reilly and Jerome Wandell
"Stochastic simulation of resist linewidth roughness and critical dimension uniformity for optical lithography", J. Micro/Nanolith. MEMS MOEMS. 9(4), 041212 (December 01, 2010). ; http://dx.doi.org/10.1117/1.3517090


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