Special Section on Theory and Practice of MEMS, NEMS, and MOEMS

High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors

[+] Author Affiliations
Jo-Han Hsu

National Tsing Hua University, Department of Power Mechanical Engineering, Hsinchu 30013, Taiwan

Max Ti-Kuang Hou

National United University, Department of Mechanical Engineering, Miaoli 36003, Taiwan

Rongshun Chen

National Tsing Hua University, Department of Power Mechanical Engineering, Hsinchu 30013, Taiwan

J. Micro/Nanolith. MEMS MOEMS. 10(1), 011502 (February 28, 2011). doi:10.1117/1.3533325
History: Received August 03, 2010; Revised November 20, 2010; Accepted December 02, 2010; Published February 28, 2011; Online February 28, 2011
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In this paper, a high resolution Vernier-type displacement sensing mechanism is proposed by utilizing Vernier-type suspended gate field-effect transistors (SGFETs), The field-effect transistor benefits from its linear output signal and simple structure, and the concept of Vernier gate is used to enhance the resolution. The displacement of the comb-drive actuator is sensed via the output drain current of SGFET. Design and analysis for Vernier-type suspended gate were presented and some characteristics of the Vernier-type SGFETs were also discussed in simulation results.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Jo-Han Hsu ; Max Ti-Kuang Hou and Rongshun Chen
"High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors", J. Micro/Nanolith. MEMS MOEMS. 10(1), 011502 (February 28, 2011). ; http://dx.doi.org/10.1117/1.3533325


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