High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors

Jo-Han Hsu; Max Ti-Kuang Hou; Rongshun Chen

doi:10.1117/1.3533325

1 January 2011 High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors

Jo-Han Hsu, Max Ti-Kuang Hou, Rongshun Chen

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 10, Issue 1, 011502 (January 2011). https://doi.org/10.1117/1.3533325

Abstract

In this paper, a high resolution Vernier-type displacement sensing mechanism is proposed by utilizing Vernier-type suspended gate field-effect transistors (SGFETs), The field-effect transistor benefits from its linear output signal and simple structure, and the concept of Vernier gate is used to enhance the resolution. The displacement of the comb-drive actuator is sensed via the output drain current of SGFET. Design and analysis for Vernier-type suspended gate were presented and some characteristics of the Vernier-type SGFETs were also discussed in simulation results.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Jo-Han Hsu, Max Ti-Kuang Hou, and Rongshun Chen "High-resolution microfabricated Vernier-type displacement sensor using suspended gate field-effect transistors," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(1), 011502 (1 January 2011). https://doi.org/10.1117/1.3533325

Published: 1 January 2011

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