Articles

Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

[+] Author Affiliations
Philip C. W. Ng

National Taiwan University, Department of Electrical Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

Kuen-Yu Tsai

National Taiwan University, Department of Electrical Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

Yen-Min Lee

National Taiwan University, Department of Engineering Science, and Ocean Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

Fu-Min Wang

National Taiwan University, Graduate Institute of Electronics Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

Jia-Han Li

National Taiwan University, Department of Engineering Science, and Ocean Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

Alek C. Chen

ASML Taiwan Ltd., Technology Development Center, No. 59, Ke Ji 6th Road, Gueishan, Taoyuan 33383, Taiwan

J. Micro/Nanolith. MEMS MOEMS. 10(1), 013004 (March 07, 2011). doi:10.1117/1.3533222
History: Received January 14, 2010; Revised November 19, 2010; Accepted November 29, 2010; Published March 07, 2011; March 23, 2011
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Extreme ultraviolet (EUV) lithography is a promising candidate for high-volume manufacturing at the 22-nm half-pitch node and beyond. EUV projection lithography systems need to rely on reflective optical elements and masks with oblique illumination for image formation. It leads to undesired effects such as pattern shift and horizontal-to-vertical critical dimension bias, which are generally reported as shadowing. Rule-based approaches proposed to compensate for shadowing include changing mask topography, introducing mask defocus, and biasing patterns differently at different slit positions. However, the electromagnetic interaction between the incident light and the mask topography with complicated geometric patterns, such as optical diffraction, not only causes shadowing but also induces proximity effects. This phenomenon cannot be easily taken into account by rule-based corrections and thus imposes a challenge on a partially model-based correction flow, the so-called combination of rule- and model-based corrections. A fully model-based correction flow, which integrates an in-house optical proximity correction algorithm with rigorous three-dimensional mask simulation, is proposed to simultaneously compensate for shadowing and proximity effects. Simulation results for practical circuit layouts indicate that the fully model-based correction flow significantly outperforms the partially model-based one in terms of correction accuracy, while the total run time is slightly increased.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Philip C. W. Ng ; Kuen-Yu Tsai ; Yen-Min Lee ; Fu-Min Wang ; Jia-Han Li, et al.
"Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects", J. Micro/Nanolith. MEMS MOEMS. 10(1), 013004 (March 07, 2011). ; http://dx.doi.org/10.1117/1.3533222


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