Articles

Pellicle contribution to optical proximity and critical dimension uniformity for 1.35 numerical aperture immersion ArF lithography

[+] Author Affiliations
Lieve Van Look, Joost Bekaert, Bart Laenens, Geert Vandenberghe

imec, Kapeldreef 75, B-3001 Leuven, Belgium

Jan Richter, Karsten Bubke, Jan Hendrik Peters

Advanced Mask Technology Center GmbH, Raehnitzer Allee 9, D-01109 Dresden, Germany

Koen Schreel, Mircea Dusa

ASML BV, De Run 6501, 5504 DR Veldhoven, The Netherlands

J. Micro/Nanolith. MEMS MOEMS. 10(1), 013009 (March 08, 2011). doi:10.1117/1.3541779
History: Received June 28, 2010; Revised November 20, 2010; Accepted December 08, 2010; Published March 08, 2011; Online March 08, 2011
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Pellicles are mounted on the masks used in ArF lithography for integrated circuit manufacturing to ensure defect-free printing. The pellicle, a thin transparent polymer film, protects the reticle from dust. But, as the light transmittance through the pellicle has an angular dependency, the pellicle also acts as an apodization filter. In the current work, we present both experimental and simulation results at 1.35 numerical aperture immersion ArF lithography showing the influence of two types of pellicles on proximity and intra-die critical dimension uniformity (CDU). To do so, we mounted and dismounted the different pellicle types on one and the same mask. The considered structures on wafer are compatible with the 32-nm logic node for poly and metal. For the standard ArF pellicle (thickness 830 nm), we experimentally observe a distinct effect of several nm due to the pellicle presence on both the proximity and the intra-die CDU. For the more advanced pellicle (thickness 280 nm), no signature of the pellicle on proximity or CDU could be found. By modeling the pellicle's optical properties as a Jones Pupil, we are able to simulate the pellicle effects with good accuracy. These results indicate that for the 32-nm node, it is recommended to take the pellicle properties into account in the optical proximity correction calculation when using a standard pellicle. In addition, simulations also indicate that a local dose correction can compensate to a large extent for the intra-die pellicle effect. When using the more advanced thin pellicle (280 nm), no such corrections are needed.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Topics

Pellicles

Citation

Lieve Van Look ; Joost Bekaert ; Bart Laenens ; Geert Vandenberghe ; Jan Richter, et al.
"Pellicle contribution to optical proximity and critical dimension uniformity for 1.35 numerical aperture immersion ArF lithography", J. Micro/Nanolith. MEMS MOEMS. 10(1), 013009 (March 08, 2011). ; http://dx.doi.org/10.1117/1.3541779


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