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Critical dimension–scanning electron microscope magnification calibration with 25-nm pitch grating reference

[+] Author Affiliations
Yoshinori Nakayama, Jiro Yamamoto

Hitachi, Ltd., Central Research Laboratory, 1-280, Higashi-koigakubo, Kokubunji, Tokyo 185-8601 Japan

Hiroki Kawada

Hitachi High-Technologies Corporation, 882, Ichige, Hitachinaka, Ibaraki 312-8504 Japan

J. Micro/Nanolith. MEMS MOEMS. 10(1), 013021 (March 30, 2011). doi:10.1117/1.3565466
History: Received June 14, 2010; Revised December 28, 2010; Accepted February 23, 2011; Published March 30, 2011; Online March 30, 2011
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We present a novel multilayer grating pattern with a sub-50-nm pitch for critical dimension–scanning electron microscope (CD-SEM) magnification calibration as an advanced version of the conventional 100-nm pitch grating reference. A 25-nm pitch grating reference is fabricated by multilayer deposition of alternating materials and then material-selective chemical etching of the polished cross-sectional surface. A line and space pattern with 25-nm pitch is easily resolved, and a high-contrast secondary electron image of the grating pattern is obtained under 1-kV acceleration voltage using the CD-SEM. The uniformity of the 25-nm pitch of the grating is <1 nm in three standard deviations of the mean. The line-edge roughness of the grating pattern is also <0.5 nm. Such a fine and uniform grating pattern will fulfill the requirements of a magnification calibration reference for a next-generation CD-SEM.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Yoshinori Nakayama ; Jiro Yamamoto and Hiroki Kawada
"Critical dimension–scanning electron microscope magnification calibration with 25-nm pitch grating reference", J. Micro/Nanolith. MEMS MOEMS. 10(1), 013021 (March 30, 2011). ; http://dx.doi.org/10.1117/1.3565466


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