Measurement of critical dimension in scanning electron microscope mask images

Wonsuk Lee; Sang Hyun Han; Hong Jeong

doi:10.1117/1.3574771

1 April 2011 Measurement of critical dimension in scanning electron microscope mask images

Wonsuk Lee, Sang Hyun Han, Hong Jeong

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 10, Issue 2, 023003 (April 2011). https://doi.org/10.1117/1.3574771

Abstract

In semiconductor industries, controlling and measuring critical dimensions are two important tools to design masks. However, measuring the dimensions with physical tools becomes more challenging, and the traditional method of measuring is slow and has many processes though it is accurate. This paper suggests a method that accurately measures the critical dimension length in a short time based on the digital image processing.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Wonsuk Lee, Sang Hyun Han, and Hong Jeong "Measurement of critical dimension in scanning electron microscope mask images," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(2), 023003 (1 April 2011). https://doi.org/10.1117/1.3574771

Published: 1 April 2011

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available