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Measurement of critical dimension in scanning electron microscope mask images

[+] Author Affiliations
Wonsuk Lee

POSTECH, Department of Electronic and Electrical Engineering, Room 308, LG Research Building, Hyoja-dong, Nam-gu, Pohang-si, Gyeongbuk 790-784, Republic of Korea

Sang Hyun Han

POSTECH, Department of Electronic and Electrical Engineering, Room 308, LG Research Building, Hyoja-dong, Nam-gu, Pohang-si, Gyeongbuk 790-784, Republic of Korea

Hong Jeong

POSTECH, Department of Electronic and Electrical Engineering, Room 308, LG Research Building, Hyoja-dong, Nam-gu, Pohang-si, Gyeongbuk 790-784, Republic of Korea

J. Micro/Nanolith. MEMS MOEMS. 10(2), 023003 (April 27, 2011). doi:10.1117/1.3574771
History: Received August 31, 2010; Accepted March 17, 2011; Published April 27, 2011; Online April 27, 2011
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In semiconductor industries, controlling and measuring critical dimensions are two important tools to design masks. However, measuring the dimensions with physical tools becomes more challenging, and the traditional method of measuring is slow and has many processes though it is accurate. This paper suggests a method that accurately measures the critical dimension length in a short time based on the digital image processing.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Wonsuk Lee ; Sang Hyun Han and Hong Jeong
"Measurement of critical dimension in scanning electron microscope mask images", J. Micro/Nanolith. MEMS MOEMS. 10(2), 023003 (April 27, 2011). ; http://dx.doi.org/10.1117/1.3574771


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