Articles

Advanced substrate thinning process for GaAs-based devices

[+] Author Affiliations
Jason Sun

U.S. Army Research Laboratory, Adelphi, Maryland 20783

Kwong-Kit Choi

U.S. Army Research Laboratory, Adelphi, Maryland 20783

Merzy D. Jhabvala

NASA Goddard Space Flight Center, Greenbelt, Maryland 20771

Christine Jhabvala

NASA Goddard Space Flight Center, Greenbelt, Maryland 20771

J. Micro/Nanolith. MEMS MOEMS. 10(2), 023004 (April 27, 2011). doi:10.1117/1.3580755
History: Received January 26, 2011; Revised March 22, 2011; Accepted March 30, 2011; Published April 27, 2011; Online April 27, 2011
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We developed an optimized substrate removal process for GaAs-based opto-electronic devices by establishing a reliable two-step process. In this process, the substrate is first thinned by mechanical lapping and then followed by selective high density plasma etching. The adopted inductively coupled plasma etching, having an optimized boron trichloride (BCl3)/sulfur hexafluoride (SF6)/argon composition, shows a nearly infinite etching selectivity for the GaAs substrate over the aluminum gallium arsenide (AlxGa1-xAs) etch-stop layer. The surface of the die is perfectly smooth and mirror-like after processing. In addition to its simplicity, the process is also highly reproducible and shows no damage to the underlying detector material.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Jason Sun ; Kwong-Kit Choi ; Merzy D. Jhabvala and Christine Jhabvala
"Advanced substrate thinning process for GaAs-based devices", J. Micro/Nanolith. MEMS MOEMS. 10(2), 023004 (April 27, 2011). ; http://dx.doi.org/10.1117/1.3580755


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