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Fabrication of sloped sidewalls by inductively coupled plasma etching for silicon micro-optic structures

[+] Author Affiliations
Lirong Sun

University of Dayton, Electro-Optics Graduate Program, 300 College Park, College Park Center, Dayton, Ohio 45469-0245

Andrew Sarangan

University of Dayton, Electro-Optics Program, 300 College Park, College Park Center, Room 572, Dayton, Ohio 45469-0245

J. Micro/Nanolith. MEMS MOEMS. 10(2), 023006 (April 29, 2011). doi:10.1117/1.3574136
History: Received January 28, 2010; Revised January 25, 2011; Accepted March 10, 2011; Published April 29, 2011; Online April 29, 2011
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Current work on deep-reactive ion etching has primarily focused on creating vertical sidewalls for microelectromechanical system and electronics applications. For micro-optical and micro-optoelectromechanical system structures control of the sidewall angles other than vertical is as important as the ultimate depth. In this work, we investigate the control of sidewall profiles using an inductively coupled plasma technique. The material systems being investigated on blanket samples are silicon and silicon dioxide with CF4, CHF3, and SF6 chemistries. Micro-optic structures are created by photolithography and CHF3 gas has been explored to achieve a wide range of etch rates, smooth etch profiles, and sidewall angles. The etch profiles are characterized by scanning electron microscopy.

© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Lirong Sun and Andrew Sarangan
"Fabrication of sloped sidewalls by inductively coupled plasma etching for silicon micro-optic structures", J. Micro/Nanolith. MEMS MOEMS. 10(2), 023006 (April 29, 2011). ; http://dx.doi.org/10.1117/1.3574136


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