Articles

Mask absorber roughness impact in extreme ultraviolet lithography

[+] Author Affiliations
Alessandro Vaglio Pret

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and, Katholieke Universiteit Leuven, Department of Electrical Engineering, Kasteelpark Arenberg 10, B-3001, Heverlee Belgium

Roel Gronheid

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Trey Graves

KLA-Tencor, PCI Division, Austin, Texas 78759

Mark D. Smith

KLA-Tencor, PCI Division, Austin, Texas 78759

John Biafore

KLA-Tencor, PCI Division, Austin, Texas 78759

J. Micro/Nanolith. MEMS MOEMS. 10(2), 023012 (June 29, 2011). doi:10.1117/1.3599077
History: Received April 01, 2011; Revised May 17, 2011; Accepted May 20, 2011; Published June 29, 2011; Online June 29, 2011
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Resist line-edge/width roughness is one of the most critical aspects in extreme UV lithography for the 32-nm technological node and below. It is originated by the uncertainties which characterize the lithographic process: source speckle effect, mask line and surface roughness, mirror roughness, flare effect, and resist pattern formation all contribute to the final roughness. In this paper mask and resist line-edge roughness were compared by means of frequency analysis on top-down scanning electron microscopy images: it was found that low frequency mask roughness is well correlated with the power spectral density of the resist roughness. Mask high-frequency components resulted less critical due to the natural cut-off of the optical system. Experimental data for both mask and resist were implemented in the PROLITH stochastic resist model simulator to quantify the mask line edge roughness contribution to the final resist roughness: the results showed that, for the particular lithographic setting used during the exposures, 16% of the low frequency resist roughness component is originated at the mask level. For this reason, mask impact was set as 0.6 nm of the overall line edge roughness resist budget.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Alessandro Vaglio Pret ; Roel Gronheid ; Trey Graves ; Mark D. Smith and John Biafore
"Mask absorber roughness impact in extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS. 10(2), 023012 (June 29, 2011). ; http://dx.doi.org/10.1117/1.3599077


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