Articles

Critical dimension scanning electron microscope local overlay measurement and its application for double patterning of complex shapes

[+] Author Affiliations
Shoji Hotta

Hitachi America, Ltd., Research and Development Division, Albany, New York 12203

Takumichi Sutani

Hitachi America, Ltd., Research and Development Division, Albany, New York 12203

Scott Halle

IBM at Albany Nanotech Institute, Albany, New York 12203

Daniel Moore

IBM Semiconductor Research and Development Center, Hopewell Junction, New York 12533

Chas Archie

IBM Semiconductor Research and Development Center, Hopewell Junction, New York 12533

Akiyuki Sugiyama

Hitachi High-Technologies Corporation, Hitachinaka-shi, Ibaraki-ken 312-8504, Japan

Masahiko Ikeno

Hitachi High-Technologies Corporation, Minato-ku, Tokyo 105-8717, Japan

Atsuko Yamaguchi

Hitachi, Ltd., Central Research Laboratory, Kokubunji-shi, Tokyo 185-8601, Japan

Kazuyoshi Torii

Hitachi, Ltd., Central Research Laboratory, Kokubunji-shi, Tokyo 185-8601, Japan

J. Micro/Nanolith. MEMS MOEMS. 10(2), 023014 (July 05, 2011). doi:10.1117/1.3599867
History: Received January 17, 2011; Revised May 04, 2011; Accepted May 23, 2011; Published July 05, 2011; Online July 05, 2011
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We have developed a new local overlay measurement technique on actual device patterns using a critical dimension scanning electron microscope (CD-SEM), which can be applied to two-dimensional (2D) device structures such as a static random access memory contact hole array. CD-SEM overlay measurement can provide additional local overlay information at the site of device patterns, complementary to the optical overlay. The methodology includes the use of pattern symmetry to cancel out many process effects and reduce measurement uncertainty. CD-SEM overlay metrology was compared with conventional optical overlay metrology in terms of measurement uncertainty and overlay model analysis, and very good correlation was confirmed. The developed methodology was applied to local overlay measurement of double patterning contact hole layers of leading edge devices. The local overlay distribution was obtained across the device area, and spatial correlation of the overlay error vectors was examined over a large range of distances. The applications of CD-SEM overlay metrology were explored, and methodologies were introduced to examine both the overlay of double patterning contacts at the edge of an array and lithographic process-induced overlay shift of contacts. Finally, a hybrid optical CD-SEM overlay metrology was introduced in order to capture a high order, device weighted overlay response.

© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Shoji Hotta ; Takumichi Sutani ; Scott Halle ; Daniel Moore ; Chas Archie, et al.
"Critical dimension scanning electron microscope local overlay measurement and its application for double patterning of complex shapes", J. Micro/Nanolith. MEMS MOEMS. 10(2), 023014 (July 05, 2011). ; http://dx.doi.org/10.1117/1.3599867


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