Articles

Non-delta-chrome optical proximity correction methodology for process models with three-dimensional mask effects

[+] Author Affiliations
Philip C. W. Ng

National Taiwan University, Department of Electrical Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

Kuen-Yu Tsai

National Taiwan University, Department of Electrical Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

Lawrence S. Melvin

Synopsys, Inc., Silicon Engineering Group, 2025 NW Cornelius Pass Road, Hillsboro, Oregon 97124

J. Micro/Nanolith. MEMS MOEMS. 10(3), 033010 (August 22, 2011). doi:10.1117/1.3616043
History: Received November 23, 2010; Revised May 11, 2011; Accepted July 07, 2011; Published August 22, 2011; September 15, 2011; Online August 22, 2011
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As integrated circuit design dimensions continue to shrink, previously ignored three-dimensional (3-D) mask effects have become significant for the accurate prediction and correction of proximity effects. Optical proximity correction (OPC) process models must consequently take into account 3-D mask effects. The state-of-the-art model-based OPC methodology, which is called delta-chrome OPC (DCOPC), needs the repeated computation of the mask perturbation to facilitate its convergence. The increasing complexity of OPC process models challenges this DCOPC methodology because each computation of the mask perturbation becomes prohibitively expensive. In this study, a new model-based OPC methodology, which is called non-delta-chrome OPC (non-DCOPC), is proposed without introducing any mask perturbations. It only requires image intensity information to achieve convergence using classical control techniques, and its effectiveness is demonstrated, showing that the run time with and without considering 3-D mask effects can be significantly improved. In addition, the correction accuracy of the DCOPC and non-DCOPC methodologies without considering 3-D mask effects is quite comparable. However, the correction accuracy considering 3-D mask effects can be slightly improved by the non-DCOPC methodology.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Philip C. W. Ng ; Kuen-Yu Tsai and Lawrence S. Melvin, III
"Non-delta-chrome optical proximity correction methodology for process models with three-dimensional mask effects", J. Micro/Nanolith. MEMS MOEMS. 10(3), 033010 (August 22, 2011). ; http://dx.doi.org/10.1117/1.3616043


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