Articles

Extreme ultraviolet–embedded phase-shift mask

[+] Author Affiliations
Pei-yang Yan

Intel Corporation, M/S: SC2-12, 2200 Mission College Boulevard, Santa Clara, California 95052

Michael Leeson

Intel Corporation, M/S: RA3-252, 2501 NW 229th Avenue, Hillsboro, Oregon 97124

Sang Lee, Guojing Zhang

Intel Corporation, 2200 Mission College Boulevard, Santa Clara, California 95052

Eric Gullikson, Farhad Salmassi

Lawrence Berkeley National Lab, 1 Cyclotron Road, Building 2R0400, Berkeley, California 94720-8199

J. Micro/Nanolith. MEMS MOEMS. 10(3), 033011 (August 22, 2011). doi:10.1117/1.3616060
History: Received February 16, 2011; Revised May 27, 2011; Accepted July 07, 2011; Published August 22, 2011; Online August 22, 2011
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Extreme ultraviolet lithography (EUVL)–embedded phase-shift mask (EPSM) for 16-nm half-pitch node technology and beyond generations will provide improvements in process window and low shadowing effect as compared to those of the conventional EUVL binary mask. In a previous study, we experimentally demonstrated the advantages of the EUVL EPSM for the dense lines and contacts as compared to those of the standard EUVL mask. In this study, we focused more on systematic analysis and comparison of the process windows between EUVL EPSM and conventional EUVL binary mask for various feature types. In addition, we investigated the EUVL EPSM performances as a function of phase errors in order to further define the EUVL EPSM absorber thickness uniformity requirements. Both the EUVL EPSM and binary mask were exposed at the Alpha Demo Tool at IMEC, and the wafer level data show features in the EPSM have a larger process window, lower dose-to-target value, and reduced shadowing effect as compared to those of the conventional EUVL binary mask.

© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Pei-yang Yan ; Michael Leeson ; Sang Lee ; Guojing Zhang ; Eric Gullikson, et al.
"Extreme ultraviolet–embedded phase-shift mask", J. Micro/Nanolith. MEMS MOEMS. 10(3), 033011 (August 22, 2011). ; http://dx.doi.org/10.1117/1.3616060


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