Articles

Stochastic exposure kinetics of extreme ultraviolet photoresists: simulation study

[+] Author Affiliations
Chris A. Mack

Lithoguru.com, 1605 Watchhill Road, Austin, Texas 78703

James W. Thackeray

Dow Advanced Materials, 455 Forest Street, Marlborough, Massachusetts 01752

John J. Biafore

KLA-Tencor, FINLE Division, 8843 N. Capital of Texas Highway, Austin, Texas 78759

Mark D. Smith

KLA-Tencor, FINLE Division, 8843 N. Capital of Texas Highway, Austin, Texas 78759

J. Micro/Nanolith. MEMS MOEMS. 10(3), 033019 (September 19, 2011). doi:10.1117/1.3631753
History: Received March 23, 2011; Revised August 01, 2011; Accepted August 11, 2011; Published September 19, 2011; Online September 19, 2011
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The stochastic nature of extreme ultraviolet (EUV) resist exposure leads to variations in the resulting acid concentration, which leads to line-edge roughness (LER) of the resulting features. Using a stochastic resist simulator, we predicted the mean and standard deviation of the acid concentration for an open-frame exposure and fit the results to analytical expressions. The EUV resist exposure mechanism of the PROLTIH Stochastic Resist Simulator is first order, and an analytical expression for the exposure rate constant C allows prediction of the mean acid concentration of an open-frame exposure to about 1% accuracy over a wide range of parameter values. A second analytical expression for the standard deviation of the acid concentration also matched the output of the simulator to within about 1%. Given the assumptions of the PROLTIH Stochastic Resist Simulator, it is possible to use the results of this paper to predict the stochastic uncertainty in acid concentration for EUV resists, thus allowing optimization of resist processing and formulations and contributing to a comprehensive LER model.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Chris A. Mack ; James W. Thackeray ; John J. Biafore and Mark D. Smith
"Stochastic exposure kinetics of extreme ultraviolet photoresists: simulation study", J. Micro/Nanolith. MEMS MOEMS. 10(3), 033019 (September 19, 2011). ; http://dx.doi.org/10.1117/1.3631753


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