1 July 2011 Cost-driven mask strategies considering parametric yield, defectivity, and production volume
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Abstract
We provide new yield-aware mask strategies to mitigate emerging variability and defectivity challenges. To address variability, we analyze critical dimension variability with respect to reticle size and its impact on parametric yield. With a cost model that incorporates mask, wafer, and processing cost, considering throughput, yield, and manufacturing volume, we assess various reticle strategies (e.g., single-layer reticle, multiple-layer reticle, and small and large size) considering field-size-dependent parametric yield. To address defectivity, we compare parametric yield due to extreme ultraviolet mask blank defects for various reticle strategies in conjunction with reticle floorplan optimizations such as shifting of the mask pattern within a mask blank to avoid defects being superposed by performance-critical patterns of a design.
©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Kwangok Jeong, Andrew B. Kahng, and Christopher J. Progler "Cost-driven mask strategies considering parametric yield, defectivity, and production volume," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(3), 033021 (1 July 2011). https://doi.org/10.1117/1.3633246
Published: 1 July 2011
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CITATIONS
Cited by 7 scholarly publications.
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KEYWORDS
Photomasks

Reticles

Semiconducting wafers

Critical dimension metrology

Extreme ultraviolet lithography

Lithography

Manufacturing

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