Articles

Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity

[+] Author Affiliations
Chris Bencher

Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054-3299

Jo Finders

ASML Netherlands B.V., De Run 6501, 5504 DR, Veldhoven, The Netherlands

Ilan Englard

Applied Materials Europe B.V., Spicalaan 57, 2132 JG, Hoofddorp, The Netherlands

Yaron Cohen, Michael Ben-Yishai, Shmoolik Mangan

Applied Materials Israel Ltd., 9 Oppenheimer St.76701 Rehovot, Israel

Amir Sagiv

Applied Materials Israel Ltd., 9 Oppenheimer St.76701 Rehovot, Israel

Huixiong Dai, Kfir Dotan

Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054-3299

Chris Ngai

Applied Materials, Inc., 3050 Bowers Avenue, Santa Clara, California 95054-3299

Roel Knops

ASML Netherlands B.V., De Run 6501, 5504 DR, Veldhoven, The Netherlands

Orion Mouraille, Evert Mos, Alexander Kremer

ASML Netherlands B.V., De Run 6501, 5504 DR, Veldhoven, The Netherlands

J. Micro/Nanolith. MEMS MOEMS. 10(4), 043003 (October 06, 2011). doi:10.1117/1.3641409
History: Received April 25, 2011; Revised July 12, 2011; Accepted August 29, 2011; Published October 06, 2011; Online October 06, 2011
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ITRS lithography's stringent specifications for the 22 nm node are a major challenge for the semiconductor industry. With the EUV point insertion at 16 nm node, ArF lithography is expected to reach its fundamental limits. The prevailing view of holistic lithography methods, together with double patterning techniques, has targeted bringing lithography performance toward the 22 nm node (i.e., closer to the immersion scanner resolution limit) to an acceptable level. At this resolution limit, a mask is the primary contributor of systematic errors within the wafer intrafield domain. As the ITRS critical dimension uniformity (CDU) specification shrinks, it would be crucial to monitor the mask static and dynamic critical dimension (CD) changes in the fab, and use the data to control the intrafield CDU performance in a most efficient way. Furthermore, optimization and monitoring of process windows (PW) becomes more critical due to the presence of mask three-dimensional effects. This paper will present double patterning inter- and intrafield data, for CDU and PW monitoring and optimization, measured by Applied Materials’ mask inspection and CD-SEM tools. Special emphasis was given to speed and effectiveness of the inspection for a production environment.

© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Topics

Metrology ; Scanners

Citation

Chris Bencher ; Jo Finders ; Ilan Englard ; Yaron Cohen ; Amir Sagiv, et al.
"Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity", J. Micro/Nanolith. MEMS MOEMS. 10(4), 043003 (October 06, 2011). ; http://dx.doi.org/10.1117/1.3641409


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