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Evaluation of extreme ultraviolet mask defect using blank inspection, patterned mask inspection, and wafer inspection

[+] Author Affiliations
Takashi Kamo

MIRAI - Semiconductor Leading, Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki 305-8569, Japan

Tsuneo Terasawa, Takeshi Yamane, Hiroyuki Shigemura, Noriaki Takagi, Tsuyoshi Amano, Kazuo Tawarayama, Mari Nozoe, Toshihiko Tanaka, Osamu Suga, Ichiro Mori

MIRAI - Semiconductor Leading, Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki 305-8569, Japan

J. Micro/Nanolith. MEMS MOEMS. 10(4), 043006 (October 31, 2011). doi:10.1117/1.3644984
History: Received March 28, 2011; Revised August 23, 2011; Accepted September 12, 2011; Published October 31, 2011; Online October 31, 2011
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The key challenge before extreme ultraviolet lithography is to make defect-free masks, for which it is important to identify the root cause of defects, and it is also necessary to establish suitable critical mask defect size for the production of ULSI devices. We have been developing extreme ultraviolet (EUV) mask infrastructures such as a full-field actinic blank inspection tool and 199 nm wavelength patterned mask inspection tool in order to support blank/mask supplier in reducing blank/mask defects which impact wafer printing. In this paper, by evaluating the printability of programmed phase defects and absorber defects exposed by full-field scanner EUV1, we demonstrate that defect detection sensitivities of actinic blank inspection and patterned mask inspection are higher than that of wafer inspection in HP32nm. The evaluations were done by comparing the detection sensitivities of full-field actinic blank inspection tool, 199 nm wavelength patterned mask inspection tool, and electron beam (EB) wafer inspection tool. And then, based on the native defect analysis of blank/mask, we ascertained that actinic blank inspection and patterned mask inspection are effective in detecting killer defects both at the main pattern and at the light-shield border area.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Takashi Kamo ; Tsuneo Terasawa ; Takeshi Yamane ; Hiroyuki Shigemura ; Noriaki Takagi, et al.
"Evaluation of extreme ultraviolet mask defect using blank inspection, patterned mask inspection, and wafer inspection", J. Micro/Nanolith. MEMS MOEMS. 10(4), 043006 (October 31, 2011). ; http://dx.doi.org/10.1117/1.3644984


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