1 October 2011 Highly sensitive and fast scanner focus monitoring method using forbidden pitch pattern
Jinseok Heo, Jeong-Ho Yeo, Young-Hee Kim
Author Affiliations +
Abstract
Forbidden pitches that are introduced under certain illumination conditions can have extremely narrow depth of focus (DOF), so that when a lithographic pattern is transferred to a wafer, the forbidden pitch should be removed from the layout. However, the sensitivity of this narrow DOF can be utilized to monitor focus changes in the scanner system itself. In this paper, a newly developed focus monitoring method utilizing the forbidden pitches is introduced and the sensitivity and advantages of this method are discussed in detail.
©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Jinseok Heo, Jeong-Ho Yeo, and Young-Hee Kim "Highly sensitive and fast scanner focus monitoring method using forbidden pitch pattern," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(4), 043011 (1 October 2011). https://doi.org/10.1117/1.3658022
Published: 1 October 2011
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Scanners

Semiconducting wafers

Calibration

Inspection

Image analysis

Lithography

Spatial resolution

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