Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope

Alok Vaid; Bin Bin Yan; Yun Tao Jiang; Mark Kelling; Carsten Hartig; John A. Allgair; Peter Ebersbach; Matthew J. Sendelbach; Narender Rana; Ahmad D. Katnani; Erin McLellan; Charles N. Archie; Cornel Bozdog; Helen Kim; Michael Sendler; Susan Ng; Boris Sherman; Boaz Brill; Igor Turovets; Ronen Urensky

doi:10.1117/1.3655726

1 October 2011 Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope

Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John A. Allgair, Peter Ebersbach, Matthew J. Sendelbach, Narender Rana, Ahmad D. Katnani, Erin McLellan, Charles N. Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 10, Issue 4, 043016 (October 2011). https://doi.org/10.1117/1.3655726

Abstract

Shrinking design rules and reduced process tolerances require tight control of critical dimension (CD) linewidth, feature shape, and profile of the printed geometry. The holistic metrology approach consists of utilizing all available information from different sources such as data from other toolsets, multiple optical channels, multiple targets, etc., to optimize metrology recipe and improve measurement performance. Various in-line CD metrology toolsets such as scatterometry optical CD, CD-SEM, and CD-AFM are typically utilized individually in fabs. Each of these toolsets has its own set of limitations that are intrinsic to specific measurement technique and algorithm. Here we define "hybrid metrology" to be the use of any two or more metrology toolsets in combination to measure the same dataset. We demonstrate the benefits of the hybrid metrology on two test structures: 22-nm-node gate develop inspect and 32-nm-node fin-shaped field effect transistor gate final inspect. We will cover measurement results obtained using typical BKM (nonhybrid, single toolset standard results) as well as those obtained by utilizing the hybrid metrology approach. Measurement performance will be compared using standard metrology metrics; for example, accuracy and precision.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John A. Allgair, Peter Ebersbach, Matthew J. Sendelbach, Narender Rana, Ahmad D. Katnani, Erin McLellan, Charles N. Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, and Ronen Urensky "Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(4), 043016 (1 October 2011). https://doi.org/10.1117/1.3655726

Published: 1 October 2011

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