Articles

Extreme-ultraviolet secondary electron blur at the 22-nm half pitch node

[+] Author Affiliations
Roel Gronheid

IMEC Kapeldreef, 75 B-3001 Leuven, Belgium

Todd R. Younkin, Michael J. Leeson

Intel Corporation, Components Research RA3-252, 5200 NE Elam Young Parkway, Hillsboro, Oregon 97124

Carlos Fonseca, Joshua S. Hooge

Tokyo Electron America, Inc., 2400 Grove Boulevard, Austin, Texas 78741

Kathleen Nafus

Tokyo Electron Kyushu Ltd., 1-1, Fukuhara, Koshi-shi, Kumamoto 861-1116, Japan

John J. Biafore, Mark D. Smith

KLA-Tencor Prolith R&D, 8834 N. Capital of Texas Highway, Austin, Texas 78759

J. Micro/Nanolith. MEMS MOEMS. 10(3), 033004 (August 02, 2011). doi:10.1117/1.3607429
History: Received March 08, 2011; Revised June 06, 2011; Accepted June 13, 2011; Published August 02, 2011; Online August 02, 2011
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In this paper the Arrhenius behavior of blur upon extreme ultraviolet (EUV) exposure is investigated through variation of the post-exposure bake (PEB) temperature. In this way, thermally activated parameters that contribute to blur (such as acid/base diffusion) can be separated from nonthermally activated parameters (such as secondary electron blur). The experimental results are analyzed in detail using multiwavelength resist modeling based on the continuum approach and through fitting of the EUV data using stochastic resist models. The extracted blur kinetics display perfectly linear Arrhenius behavior, indicating that there is no sign for secondary electron blur at 22-nm half pitch. At the lowest PEB setting the total blur length is ∼4 nm, indicating that secondary electron blur should be well below that. The stochastic resist model gives a best fit to the current data set with parameters that result in a maximum probability of acid generation at 2.4 nm from the photon absorption site. Extrapolation of the model predicts that towards the 16-nm half pitch the impact on sizing dose is minimal and an acceptable exposure latitude is achievable. In order to limit the impact on linewidth roughness at these dimensions it will be required to control acid diffusion to ∼5 nm.

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© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation

Roel Gronheid ; Todd R. Younkin ; Michael J. Leeson ; Carlos Fonseca ; Joshua S. Hooge, et al.
"Extreme-ultraviolet secondary electron blur at the 22-nm half pitch node", J. Micro/Nanolith. MEMS MOEMS. 10(3), 033004 (August 02, 2011). ; http://dx.doi.org/10.1117/1.3607429


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