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Relationship between localized wafer shape changes induced by residual stress and overlay errors

[+] Author Affiliations
Kevin T. Turner

University of Pennsylvania, Department of Mechanical Engineering and Applied Mechanics, Philadelphia, Pennsylvania 19104

Sathish Veeraraghavan

KLA-Tencor Corporation, Milpitas, California 95035

Jaydeep K. Sinha

KLA-Tencor Corporation, Milpitas, California 95035

J. Micro/Nanolith. MEMS MOEMS. 11(1), 013001 (Mar 21, 2012). doi:10.1117/1.JMM.11.1.013001
History: Received October 3, 2011; Revised November 28, 2011; Accepted December 12, 2011
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Abstract.  The deposition of films with nonuniform residual stress can induce local changes in wafer shape and contribute to overlay errors with magnitudes that may be significant in advanced lithographic patterning processes. Understanding the fundamental relationship between residual stress, localized wafer shape changes, and overlay error is crucial for realizing new schemes to manage overlay errors, particularly at advanced nodes where feature sizes are smaller. In the present work, finite element modeling is used to quantitatively relate nonuniform residual stress in a deposited thin film to localized wafer shape changes and overlay errors. The results demonstrate that there is a strong correlation between localized shape variations induced by nonuniform residual stresses and noncorrectable overlay errors.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Kevin T. Turner ; Sathish Veeraraghavan and Jaydeep K. Sinha
"Relationship between localized wafer shape changes induced by residual stress and overlay errors", J. Micro/Nanolith. MEMS MOEMS. 11(1), 013001 (Mar 21, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.1.013001


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