Articles

New stochastic post-exposure bake simulation method

[+] Author Affiliations
Thomas Mülders

Infineon Technologies SC300 GmbH and Company OHG, P.O. Box 100964, D-01079 Dresden, Germany

Wolfgang Henke

Infineon Technologies SC300 GmbH and Company OHG, P.O. Box 100964, D-01079 Dresden, Germany

Klaus Elian

Infineon Technologies AG, Paul-Gossen-Str. 100, D-91052 Erlangen, Germany

Christoph Nölscher

Infineon Technologies SC300 GmbH and Company OHG, P.O. Box 100964, D-01079 Dresden, Germany

Michael Sebald

Infineon Technologies AG, Paul-Gossen-Str. 100, D-91052 Erlangen, Germany

J. Micro/Nanolith. MEMS MOEMS. 4(4), 043010 (December 29, 2005). doi:10.1117/1.2136867
History: Received January 31, 2005; Revised May 06, 2005; Accepted June 07, 2005; Published December 29, 2005
Text Size: A A A

A new method for simulating the post-exposure bake (PEB) of optical lithography is presented and applied to modeling the reaction-diffusion processes in a chemically amplified resist (CAR). The new approach is based on a mesoscopic description of the photoresist, taking into account the discrete nature of resist molecules and inhibitor groups that are attached to the resist polymers, but neglecting molecular details on an atomistic (microscopic) level. As a result, the time- and space-dependent statistical fluctuations of resist particle numbers, the correlations among them, and their effect on the printing result can be accounted for. The less molecules that are present in the volume of interest, the more important these fluctuations and correlations will become. This is the case for more and more shrinking critical dimensions (CD) of the lithographic structures but unchanged molecular sizes of the relevant resist species. In particular, the new PEB simulation method allows us to predict the behavior of statistical defects of the printed lithographic structures, which may strongly contribute to printing features like line edge roughness (LER).

© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Thomas Mülders ; Wolfgang Henke ; Klaus Elian ; Christoph Nölscher and Michael Sebald
"New stochastic post-exposure bake simulation method", J. Micro/Nanolith. MEMS MOEMS. 4(4), 043010 (December 29, 2005). ; http://dx.doi.org/10.1117/1.2136867


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

PubMed Articles
Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.