Special Section on Line-Edge Roughness

Modeling and characterization of contact-edge roughness for minimizing design and manufacturing variations

[+] Author Affiliations
Yongchan Ban

The University of Texas at Austin, Department of Electrical and Computer Engineering, 2400 Speedway, Austin, Texas 78712

Yuansheng Ma

GLOBALFOUNDRIES, 1050 E. Arques Avenue, Sunnyvale, California 94085

Harry J. Levinson

GLOBALFOUNDRIES, 1050 E. Arques Avenue, Sunnyvale, California 94085

David Z. Pan

The University of Texas at Austin, Department of Electrical and Computer Engineering, 2400 Speedway, Austin, Texas 78712

J. Micro/Nanolith. MEMS MOEMS. 9(4), 041211 (December 03, 2010). doi:10.1117/1.3504697
History: Received April 01, 2010; Revised September 07, 2010; Accepted September 13, 2010; Published December 03, 2010; Online December 03, 2010
Text Size: A A A

Despite intensive attention on line-edge roughness (LER), contact-edge roughness (CER) has been relatively less studied. Contact patterning is one of the critical steps in a state of the art lithography process; meanwhile, design rule shrinking leads to larger CER in contact holes. Since source/drain (S/D) contact resistance depends on contact area and shape, larger CER results in significant change in a device current. We first propose a CER model based on the power spectral density function, which is a function of rms edge roughness, correlation length, and fractal dimension. Then, we present a comprehensive contact extraction methodology for analyzing process-induced CER effects on circuit performance. In our new contact extraction model, we first dissect the contact with a same distance, and then calculate the effective resistance considering both the shape weighting factor and the distance weighting factor for stress-induced complementary metal-oxide semiconductor (CMOS) cells. Using the results of CER, we analyze the impact of both random CER and systematic variation on the S/D contact resistance, and the device saturation current. Results show that the S/D contact resistance and the device saturation current can vary by as much as 135.7 and 4.9%, respectively.

Figures in this Article
© 2010 Society of Photo-Optical Instrumentation Engineers

Citation

Yongchan Ban ; Yuansheng Ma ; Harry J. Levinson and David Z. Pan
"Modeling and characterization of contact-edge roughness for minimizing design and manufacturing variations", J. Micro/Nanolith. MEMS MOEMS. 9(4), 041211 (December 03, 2010). ; http://dx.doi.org/10.1117/1.3504697


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.