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Special Section on Directed Self-Assembly

Nanopatterning of diblock copolymer directed self-assembly lithography with wet development

[+] Author Affiliations
Makoto Muramatsu, Mitsuaki Iwashita, Takahiro Kitano, Takayuki Toshima

Tokyo Electron Kyushu Ltd., 1-1 Fukuhara, Koshi-City, Kumamoto 861-1116, Japan

Mark Somervell

Tokyo Electron America, 2400 Grove Boulevard, Austin, TX, 78741

Yuriko Seino, Daisuke Kawamura, Masahiro Kanno, Katsutoshi Kobayashi, Tsukasa Azuma

Toshiba Corporation, Corporate Research & Development Center, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

J. Micro/Nanolith. MEMS MOEMS. 11(3), 031305 (Jul 09, 2012). doi:10.1117/1.JMM.11.3.031305
History: Received November 9, 2011; Revised April 6, 2012; Accepted May 21, 2012
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Abstract.  A method for using wet development in a directed self-assembly lithography (DSAL) application is reported. For the typical diblock copolymer poly(styrene-block-methyl methacrylate) (PS-b-PMMA), the PMMA area is removed by an oxygen plasma. However, the oxygen plasma has poor selectivity for the PS portion of the block polymer and etches it simultaneously. As a result, the thickness of the residual PS pattern is thinner than desired and creates a challenge for subsequent pattern transfer. A wet development technique is discussed which offers higher selectivity between the PMMA and PS blocks in the assembled pattern. Specifically, a method using a low pressure mercury lamp and conventional tetramethylammonium hydroxide (TMAH, 2.38%) developer is proposed. Using this method, DSA pattern formation is completed in a single track having coating, baking, exposure, and development modules.

Figures in this Article
© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Makoto Muramatsu ; Mitsuaki Iwashita ; Takahiro Kitano ; Takayuki Toshima ; Mark Somervell, et al.
"Nanopatterning of diblock copolymer directed self-assembly lithography with wet development", J. Micro/Nanolith. MEMS MOEMS. 11(3), 031305 (Jul 09, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.3.031305


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