Self-assembly of block copolymers is a potential technique to be used in the fabrication of microelectronic devices. In some cases, the self-assembly is directed by means of an additional technique, e.g. photolithography. This paper studies the impact of -lithography on the properties of the polymer after the directed assembly. Placement, critical dimension and critical dimension uniformity of the features are analyzed and discussed and compared to an integrated circuit application according to the international technology roadmap for semiconductors roadmap.