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Critical material properties for pattern collapse mitigation

[+] Author Affiliations
Gustaf Winroth, Roel Gronheid

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Todd R. Younkin, James M. Blackwell

Intel Corporation, 2501 NW 229th Avenue, Hillsboro, Oregon 97124

J. Micro/Nanolith. MEMS MOEMS. 11(3), 033004 (Jul 12, 2012). doi:10.1117/1.JMM.11.3.033004
History: Received March 19, 2012; Revised June 11, 2012; Accepted June 13, 2012
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Abstract.  Modern high-resolution lithography, which employs a chemically amplified resist (CAR) at either 193 or 13.5 nm wavelength, is often limited by pattern collapse. While the general concepts of how CAR platforms work are widely understood, the influence of composition on pattern collapse has been studied to a lesser extent. In addition, the subject is often further complicated by non-disclosure of the resist chemistry used in the lithographic evaluation. Open-source photoresist platforms can be beneficial for fundamental studies on how individual components influence pattern collapse. Such platforms should mimic a typical CAR, containing—apart from the polymer—additional components such as photo acid generators (PAGs) and base quenchers. Here, 193 nm and extreme ultraviolet lithography open-source platforms are presented wherein the chemistry, composition, and concentration are all disclosed. With the aim of fundamentally understand how resist composition and behavior influences pattern collapse, the molecular weight of the polymer backbone and the concentration of both PAG and base quencher were varied. These sets of resists were exposed using high-end optical lithography scanners. The results are presented such that the probability of pattern collapse is derived as a function of the exposure wavelength, chemistry, and component concentrations.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Gustaf Winroth ; Todd R. Younkin ; James M. Blackwell and Roel Gronheid
"Critical material properties for pattern collapse mitigation", J. Micro/Nanolith. MEMS MOEMS. 11(3), 033004 (Jul 12, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.3.033004


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