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Silicon-on-insulator out-of-plane electrostatic actuator with in situ capacitive position sensing

[+] Author Affiliations
Jiankun Wang

Peking University, Institute of Microelectronics, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Beijing 100871, China

Zhenchuan Yang

Peking University, Institute of Microelectronics, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Beijing 100871, China

Guizhen Yan

Peking University, Institute of Microelectronics, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Beijing 100871, China

J. Micro/Nanolith. MEMS MOEMS. 11(3), 033006 (Jul 19, 2012). doi:10.1117/1.JMM.11.3.033006
History: Received February 7, 2012; Revised June 3, 2012; Accepted June 22, 2012
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Abstract.  An out-of-plane electrostatic comb actuator with in situ capacitive position sensing is presented. Asymmetrical vertical combs are used as the comb drives and in differential out-of-plane position sensing capacitors. A spring which can realize out-of-plane translational displacement of high-aspect-ratio structures was designed and analyzed both analytically and numerically. A robust silicon-on-insulator (SOI) process was proposed and verified to successfully fabricate the actuator with asymmetrical combs. The in situ capacitive position sensing capability was realized by the integrated out-of-plane sensing capacitors, and calibrated with the gravity as an acceleration reference. Treated as an accelerometer, the scale factor and nonlinearity of the actuator are evaluated to be 93.4mV/g and 0.03%, respectively, with the input range of ±1g. The tested static out-of-plane displacement ranges from 0.88 to 1.39 μm when the actuator is placed horizontally, and 1.16 to 1.25 μm when placed vertically, both with the supply voltage of 12 volts.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Jiankun Wang ; Zhenchuan Yang and Guizhen Yan
"Silicon-on-insulator out-of-plane electrostatic actuator with in situ capacitive position sensing", J. Micro/Nanolith. MEMS MOEMS. 11(3), 033006 (Jul 19, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.3.033006


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