Special Section on EUV Sources for Lithography

Development of stable extreme-ultraviolet sources for use in lithography exposure systems

[+] Author Affiliations
Igor V. Fomenkov

Cymer Inc.17075 Thornmint CourtSan Diego, California 92127

Bruno La Fontaine, Daniel Brown, Imtiaz Ahmad, Peter Baumgart, David C. Brandt, Alex I. Ershov, Dan J. Golich, Mike J. Lercel, David W. Myers, Chiraq Rajyaguru, Yezheng Tao

Cymer Inc.17075 Thornmint CourtSan Diego, California 92127

Norbert R. Böwering

Cymer Inc.17075 Thornmint CourtSan Diego, California 92127

Alexander N. Bykanov

Cymer Inc.17075 Thornmint CourtSan Diego, California 92127

Silvia De Dea

Cymer Inc.17075 Thornmint CourtSan Diego, California 92127

Nigel R. Farrar

Cymer Inc.17075 Thornmint CourtSan Diego, California 92127

Shailendra N. Srivastava

Cymer Inc.17075 Thornmint CourtSan Diego, California 92127

Georgiy O. Vaschenko

Cymer Inc.17075 Thornmint CourtSan Diego, California 92127

J. Micro/Nanolith. MEMS MOEMS. 11(2), 021110 (Jun 29, 2012). doi:10.1117/1.JMM.11.2.021110
History: Received September 26, 2011; Revised January 11, 2012; Accepted February 6, 2012
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Abstract.  Laser-produced plasma sources offer the best option for scalability to support high-throughput lithography. Challenges associated with the complexity of such a source are being addressed in a pilot program where sources have been built and integrated with extreme-ultraviolet (EUV) scanners. Up to now, five pilot sources have been installed at R&D facilities of chip manufacturers. Two pilot sources are dedicated to product development at our facility, where good dose stability has been demonstrated up to levels of 32 W of average EUV power. Experimental tests on a separate experimental system using a laser prepulse to optimize the plasma conditions or EUV conversion show power levels equivalent to approximately 160 W within a low duty-cycle burst, before dose control is applied. The overall stability of the source relies on the generation of Sn droplet targets and large EUV collector mirrors. Stability of the Sn droplet stream is well below 1 μm root mean square during 100+h of testing. The lifetime of the collector is significantly enhanced with improved coatings, supporting uninterrupted operation for several weeks.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Igor V. Fomenkov ; Bruno La Fontaine ; Daniel Brown ; Imtiaz Ahmad ; Peter Baumgart, et al.
"Development of stable extreme-ultraviolet sources for use in lithography exposure systems", J. Micro/Nanolith. MEMS MOEMS. 11(2), 021110 (Jun 29, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.2.021110


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