Extreme ultraviolet lasers: principles and potential for next-generation lithography

Juerg E. Balmer; Davide Bleiner; Felix Staub

doi:10.1117/1.JMM.11.2.021119

10 May 2012 Extreme ultraviolet lasers: principles and potential for next-generation lithography

Juerg E. Balmer, Davide Bleiner, Felix Staub

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 11, Issue 2, 021119 (May 2012). https://doi.org/10.1117/1.JMM.11.2.021119

Abstract

Extreme ultraviolet (EUV) lasers in the wavelength range of ~ 10 to 20 nm have matured to a point where dedicated applications such as at-wavelength inspection of extreme-ultraviolet lithography (EUVL) masks become possible on the laboratory scale. The authors briefly review the principles of plasma-based EUV lasers, the progress made so far, and the output characteristics of interest to the EUVL community.

Citation Download Citation

Juerg E. Balmer, Davide Bleiner, and Felix Staub "Extreme ultraviolet lasers: principles and potential for next-generation lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(2), 021119 (10 May 2012). https://doi.org/10.1117/1.JMM.11.2.021119

Published: 10 May 2012

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