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Experimental analysis of pattern line width in digital maskless lithography

[+] Author Affiliations
Hoonchul Ryoo

Yonsei University, School of Mechanical Engineering, Seoul, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea

Dong Won Kang

Yonsei University, School of Mechanical Engineering, Seoul, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea

Yo-Tak Song

Opto Finetech, Cheonan-si, Chungnam, 717-1 Baekseok-dong, Cheonan Si Seobuk-gu, Chungcheongnam-Do 331-220, Republic of Korea

Jae W. Hahn

Yonsei University, School of Mechanical Engineering, Seoul, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea

J. Micro/Nanolith. MEMS MOEMS. 11(2), 023004 (Jun 01, 2012). doi:10.1117/1.JMM.11.2.023004
History: Received December 29, 2011; Revised March 23, 2012; Accepted April 20, 2012
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Abstract.  We study the distributions of line/space (L/S) patterns based on exposure dose variation using point array techniques (a type of digital maskless lithography). The intensity distributions of L/S patterns were simulated using the point array technique, and the pattern profiles were obtained by applying the effect of the photoresist contrast to the intensity distribution. As the dose increased, line width also increased. An experiment was performed to verify the simulation results. The minimum line widths of the L/S patterns were about 3.44 and 3.89 μm at laser power levels of 100% and 60%, respectively. The standard deviations of the line widths were 0.28 and 0.03 μm at the 4 and 13 μm L/S patterns, respectively.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Hoonchul Ryoo ; Dong Won Kang ; Yo-Tak Song and Jae W. Hahn
"Experimental analysis of pattern line width in digital maskless lithography", J. Micro/Nanolith. MEMS MOEMS. 11(2), 023004 (Jun 01, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.2.023004


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