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Time-dependent electron-beam-induced photoresist shrinkage effects

[+] Author Affiliations
Benjamin Bunday

SEMATECH, Advanced Metrology, 257 Fuller Road, Suite 2200, Albany, New York 12203

Aaron Cordes

SEMATECH, Advanced Metrology, 257 Fuller Road, Suite 2200, Albany, New York 12203

Carsten Hartig

GLOBALFOUNDRIES, Dresden Module One LLC & Co. KG, Wilschdorfer Landstrasse 101, D-01109 Dresden, Germany

John Allgair

GLOBALFOUNDRIES, Dresden Module One LLC & Co. KG, Wilschdorfer Landstrasse 101, D-01109 Dresden, Germany

Alok Vaid

GLOBALFOUNDRIES, 2070 Route 52, Hopewell Junction, New York 12533

Eric Solecky

IBM MicroelectronicsEast Fishkill, New York 12524

Narender Rana

IBM MicroelectronicsEast Fishkill, New York 12524

J. Micro/Nanolith. MEMS MOEMS. 11(2), 023007 (Jun 05, 2012). doi:10.1117/1.JMM.11.2.023007
History: Received May 10, 2011; Revised February 20, 2012; Accepted March 21, 2012
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Abstract.  We explore how photoresist shrinkage behavior due to e-beam measurement by critical dimension-scanning electron microscope (CD-SEM) depends on various time-related factors. This will include an investigation of how the photoresist critical dimension (CD) and CD shrinkage varies with photoresist age and the differences in shrinkage trends between load/unload and static and dynamic repeatability cases, where time between measurements is a key variable. The results for this typical immersion argon flouride photoresist process will show that resist CD and shrinkage variation due to resist age and vacuum-cycling is insignificant, yet the shrinkage is strongly linked to time between consecutive measurements, with a well-defined, high-certainty logarithmic decay with time. These experiments identify a key difference between the shrinkage seen in static versus dynamic measurements, which will be shown to have far-reaching implications for the shrinkage phenomenon in general and for the best-known methods for executing CD-SEM metrology with photoresist samples.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Benjamin Bunday ; Aaron Cordes ; Carsten Hartig ; John Allgair ; Alok Vaid, et al.
"Time-dependent electron-beam-induced photoresist shrinkage effects", J. Micro/Nanolith. MEMS MOEMS. 11(2), 023007 (Jun 05, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.2.023007


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