Special Section on Alternative Lithographic Technologies

50-keV electron multibeam mask writer for the 11-nm HP node: first results of the proof-of-concept electron multibeam mask exposure tool

[+] Author Affiliations
Christof Klein

IMS Nanofabrication AG, Schreygasse 3, A-1020 Vienna, Austria

Hans Loeschner

IMS Nanofabrication AG, Schreygasse 3, A-1020 Vienna, Austria

Elmar Platzgummer

IMS Nanofabrication AG, Schreygasse 3, A-1020 Vienna, Austria

J. Micro/Nanolith. MEMS MOEMS. 11(3), 031402 (Aug 07, 2012). doi:10.1117/1.JMM.11.3.031402
History: Received April 18, 2012; Revised June 5, 2012; Accepted July 2, 2012
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Abstract.  First results obtained with IMS Nanofabrication’s 50-keV proof-of-concept electron multibeam mask exposure tool (eMET POC) are presented. The eMET POC was designed from scratch to meet the requirements of the 11-nm half-pitch node and already features the same column as future high volume manufacturing (HVM) tools. All exposures shown in this paper were the result of 262,144 beams of 20 nm beam size working in parallel demonstrating the capability of IMS’s multibeam technology. An alpha tool is scheduled for 2014, followed by a beta tool in 2015 and first-generation HVM tools in 2016.

Figures in this Article
© 2012 Society of Photo-Optical Instrumentation Engineers

Topics

Electrons

Citation

Christof Klein ; Hans Loeschner and Elmar Platzgummer
"50-keV electron multibeam mask writer for the 11-nm HP node: first results of the proof-of-concept electron multibeam mask exposure tool", J. Micro/Nanolith. MEMS MOEMS. 11(3), 031402 (Aug 07, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.3.031402


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